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NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t = 5 s (Note 3)
Symbol
R q JA
R q JA
Max
1000
600
Unit
° C/W
3. Surface ? mounted on FR4 board using the minimum recommended pad size, or 2
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
mm 2 ,
1 oz Cu.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 20
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = ? 5.0 V
V GS = 0 V, V DS = ? 5.0 V
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
? 50
? 100
? 200
nA
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 5.0 V
± 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(ON)
V GS = V DS , I D = ? 250 m A
V GS = ? 4.5 V, I D = ? 100 mA
? 0.4
? 0.7
2.0
? 1.0
3.5
V
V GS = ? 2.5 V, I D = ? 50 mA
2.6
4.0
V GS = ? 1.8 V, I D = ? 20 mA
V GS = ? 1.5 V, I D = ? 10 mA
V GS = ? 1.2 V, I D = ? 1.0 mA
3.4
4.0
6.0
5.5
7.0
W
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 125 mA
0.26
S
Source ? Drain Diode Voltage
V SD
V GS = 0 V, I S = ? 200 mA
? 0.5
? 1.4
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
13
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
f = 1 MHz, V GS = 0 V
V DS = ? 15 V
3.4
1.6
pF
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn ? On Delay Time
t d(ON)
30
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 15 V,
I D = ? 200 mA, R G = 2.0 W
56
196
145
ns
4. Switching characteristics are independent of operating junction temperatures
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